1 emitter 2 base 3 collector 2SB1220 features high collector-emitter voltage v ceo low noise voltage nv absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -150 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v peak collector current i cp -100 ma collector current i c -50 ma collector power dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage v ceo i c = -100 a, i b = 0 -150 v emitter-base voltage v ebo i e =-10a,i c =0 -5 v collector-base cutoff current i cbo v cb = -100 v, i e =0 -1 a forward current transfer ratio h fe v ce =-5v,i c = -10 ma 130 450 collector-emitter saturation voltage v ce(sat) i c =-30ma,i b =-3ma -1 v transition frequency f t v cb =-10v,i e = 10 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 4 pf noixe voltage nv v ce =-10v,i c =-1ma,g v =80db, r g = 100k , function = flat 150 mv h fe classification marking rank r s t h fe 130 220 185 330 260 450 i sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
|
